Atomic Layer Deposition

Atomic Layer Deposition - ALD
Example of Al2O3
ALD at MiNaLab
Deposition materials
Advantages and disadvantages
Atomic Layer Deposition
• Excellent thickness controll
and step coverage
• Self-limited process
• Developed in 1974
• First industrial use:
electrolumenicent panels
Some opportunities of ALD
• Nanolaminate:
ZrO2 and SiO2
• Coated deep trench
ALD of Al2O3 on Si
ALD at MiNaLab
Al2O3, ZnO, TiO2
Thickness: sub nm - 400 nm
ALD – deposited materials
• Oxides (Al2O3, ZnO, TiO2, HfO2 , HfSiO,
La2O3, SiO2, Ta2O5)
• Nitrides (TiN, TaN, SiN, HfN, AlN)
• Sulfides (ZnS)
• Metals (Cu, W, Pt, Ru)
• High quality photonics
• Thin solarcells laminate =>
• Thin gate oxides with high dielectric
• Diffusion barriers and passivation of
active layers
• Single metal coating for catalysts
Advantages of ALD
Low temperature deposition is possible
Excellent step coverage and reproducibility
High density film and no pinholes
Easy to scale up
Disadvantages of ALD
• Expensive equipment
• Critical adjustment of the flow:
too much flow => clogging of valves
too low flow => under-performance
ALD is excellent for:
Thin films
High density
Excellent stociometry controll
3D structures
Large area substrates: no problem 

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