Development of High Voltage 4H-Silicon Carbide Power Devices Dr. Craig A. Fisher Affl.: School of Engineering, University of Warwick Research Fellow on the UPE Project (Devices theme). Project Plans & Objectives • Development of edge termination structures for 10 kV 4H-SiC power devices. • Development of reliable ohmic contact solutions for high power density / high temperature applications. • Development of 10 kV 4H-SiC MOSFET device. Potential Outcomes & Exploitation Plans • The 10 kV 4H-SiC MOSFET can potentially transform a range of power electronics applications. • Opportunity to generate IP using unique processing capability at Warwick. Input from the PE Community • Input from other researchers in the semiconductor field would be useful • Have a particular interest in high-k dielectrics for MOS gates and surface passivation.