Unit-5 CMOS subsystem design - KIT

Report
(Pucknell p:-134-178)
(Neil west -p:-317-357)
 Switch logic
 Gate logics
 Combinational logic
 Clocked sequential circuits
 Clocking Strategies,PLL
Introduction
 Large systems are composed of sub-systems,
known as Leaf-Cells
 The most basic leaf cell is the common logic
gate (inverter, nand, ..etc)
 Structured Design
 High regularity
 Leaf cells replicated many times and interconnected
to form the system
 Logical and systematic approach to VLSI design
is essential
Architectural issues
 In all design process, a logical and systematic approach is
essential
 Define the requirements
 Partition the overall architecture into appropriate
subsystems
 Consider communication paths carefully
 Floor plan :how the system is to map onto the silicon
 Aim for regular structures
 Draw stick or symbolic diagrams
 Convert each cell to a layout
 Carry out a design rule check on each cell
 Simulate the performance of each subsystem
Switch Logic
 Switch logic is based on the ‘pass transistor ‘ or on
transmission gates.
1. Pass transistor
2. Gate(restoring) logic
Pass transistor
Pass transistor and transmission-gate
 switches and switch logic may be formed from simple n-
p-pass transistors or from transmission-gate
 Signal degradation occurs in Pass transistor logic
 No Signal degradation occurs in transmission gate ,but
more area is occupied
Vout
Vin
S’
S
S
Gate(restoring) logic
 Gate logic is based on the general arrangement
circuits
 Ex : Inverter, Nand Nor, And, Or….
Inverter
 Some of the commonly used inverter circuit diagrams
Vdd = 5V
Vdd = 5V
Vout V
in
Vin
Vout
nMOS inverter
16λ
8λ
2λ
2λ
4λ
2λ
Two input nMOS,CMOS, Nand Gate
Nand gate two significant factors
1)
nMOS Nand gate area requirement:
As inputs are added, so must there be a
corresponding adjustment of the length of the pull-up
transistor channel to maintain the required overall ratio
2) nMOS Nand gate delay:
For n inputs, then the length and resistance of the
pull-up transistor must be increased by factor of n to
keep correct ratio.
Delay associated with the nMOS Nand gate
Г
Nand
=nГ
Two input nMOS,CMOS Nor gate
 Since both transistor of the nMOS Nor gate provide a
path to ground from the pull-up transistor, the ratios
must be such that any one conducting pull-down
transistor will give the appropriate inverter-like
transfer characteristic.
Pseudo-nMOS logic
 The circuit is replaced by depletion mode pull-up
transistor of the standard nMOS circuits with a ptransistor with gate connected to Vss.
 Ex: 3 input NAND gate..
Dynamic CMOS logic
 Charge sharing problem unless the inputs are
constrained not to change during the on period of the
clock
 Single phase dynamic logic structures cannot be
cascaded
Clocked CMOS logic
 Logic is implemented in both n- and p-transistors in the
form of a p-block and n-block structure
 The logic is evaluated only during on period of the clock
n-p CMOS logic
 The actual logic blocks are alternately ‘n’ and ‘p’ in a
cascaded structure
 Logic operation depends on clock φ and clock bar φ’
alternatively
Examples of structured design
(Combinational logic)
 A parity generator
 Bus arbitration logic for n-line bus
 Multiplexers (Data selectors)
 A general logic function block
 A four-line gray code to binary code converter
 The programmable logic array (PLA)
Parity generator
P
P’
A0 A1 A2
An-1 An
P=1 even number of 1’s at input
P=0 odd number of 1’s at input
 Ai=1 parity is changed, Pi=P’i-1
 Ai=0 parity is unchanged, Pi=Pi-1
Stick diagram
Pi
P’i
P i-1
P’ i-1
Ai
A’i
Bus arbitration logic for n-line bus
 If the highest priority line An is Hi (logic 1), then
output line Apn will be Hi and all other output line Lo
(logic o), irrespective of the state of the other input
lines A1----An-1.
 Similarly , Apn-1 will be Hi and all other output line Lo
(logic o), irrespective -1 will be Hi only when An-1 is Hi
and An is Lo; again the state of all input lines of lower
priority (A1----An-2)will have no effect and all other
output lines will be Lo.
n-line bus Stick diagram
Apn
An
Apn-1
An-1
0
Apn-2
An-2
0
0
An
A’n
An-1
A’n-1
Multiplexers (Data selectors)
I0
I1
MUX
I2
I3
S1 S’1 S0 S’0
Z
MUX Stick diagram
Z
I0
I1
I2
I3
S1
S’1
S0
S’0
A general logic function block
A’
A
Select
inputs
Z
B’
Nor, Nand
Data
inputs
B
C3
C2
C1
C0
0
0
0
1
0
1
1
1
A four-line gray code to binary
code converter
 A0=G0 A1
 A1=G1 A2
 A2=G2 A3
 A3=G3
}
Exclusive-or operations
The programmable logic array
(PLA)
oLose sight of overall system requirements and restrictions
oUse of buses to interconnect subsystems and circuits must
always be most carefully considered.
Bipolar drivers for Bus Lines
Basic arrangements for Bus Lines
Power dissipation for CMOS and BiCMOS circuits
Current limitations
Further aspects of Vdd and Vss rail distribution
Bipolar drivers for Bus Lines
 Bus structures carrying data and control signals are
generally long and connected to and trough a
significant number of circuits and subsystems
 Propagation of signals may be a slow process
 The capacitive load driving properties of bipolar
transistors in a BiCMOS process make bipolar drivers
an attractive proposition for bus lines
Basic arrangements for Bus Lines
 There are three classes of bus- passive ,active and
precharged
 A passive bus rail is a floating rail to which signals may
be connected from drivers through series switches
 In active bus a common pull-up Rp.u and n-type pull-
down transistors or series n-type transistor logic
The Precharged bus concept
 The precharged bus approach limits the effects of bus
capacitance in that a single pull-up transister whch is
turned on only during 2
Power dissipation for CMOS and
BiCMOS Circuits
 The overall dissipation is composed of two terms:
1) P1 the dissipation due to the leakage current I1 through an ‘off’
transistor. Consequently, for n transistors, we have
P1=n.I1.Vdd
Where I1=0.1 nA, typically at room temperature.
2)
Ps is the dissipation due to energy supplied to charge and discharge
the capacitances associated with each switching circuit
Ps=CL.Vdd2.f
 Total power dissipation Pt=P1+Ps
 Power dissipation for bipolar devices can be simply modeled by
P=Vcc* Ic
 Ic is the current through the device
Current limitations for Vdd and
GND rails
 Metal migration for high current densities in metal
conductors
 Aluminum conductor threshold value
Jth=1 to 2 mA
Further aspects of Vdd and Vss rail
distribution
 Limitations of distributive rails are:
1) Metal migration imposed current density restrictions
2) The IR drop due to rail series resistance
3) The series inductance of the rails
IR drop and series inductance
 For a parent bus supplying current to other uniformly
distributed short bus branches along the length L of
the parent bus, then the current at any distance x from
the source is given by
Ix=IL(1-x/L)
series inductance
 The transmission line nature of any wiring introduces
the possibility of voltage transients due to its selfinductance L0. the transient changes in voltage due to
the presence of self-inductance can be modeled by
∆V=L0 di/dt
di/dt Is the rate of change of line current

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