J4-8_finale_upload CUBE Fiorini

Report
New Developments of SDD-Based X-Ray
Detectors for the Siddharta-2 Experiment
R. Quaglia1,2, L. Bombelli3, C. Fiorini1,2, G. Giacomini4,
F. Ficorella4, A. Picciotto4 , C. Piemonte4
1Dipartimento
di Elettronica, Informazione e Bioingegneria, Politecnico di Milano,
Milan, Italy
2INFN Sez. di Milano, Milan, Italy
3XGLab srl, Milan, Italy
4Fondazione Bruno Kessler, Trento, Italy
2
SIDDHARTA-2
SIlicon Drift Detector for Hadronic Atom Research by Timing Applications
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Seoul, IEEE NSS/MIC/RTSD 2013
LNF- INFN, Frascati, Italy
SMI- ÖAW, Vienna, Austria
IFIN – HH, Bucharest, Romania
Politecnico, Milano, Italy
Fondazione Bruno Kessler, Trento, Italy
RIKEN, Japan
Univ. Tokyo, Japan
Victoria Univ., Canada
Riccardo Quaglia
Upgrade of the X-ray spectrometer for the
SIDDHARTA-2 experiment
K-
X-ray
3
Strong interaction studies al low energy
(non-perturbative QCD in strangeness
sector) through precise X-ray spectroscopy
measurements of Kaonic atoms transitions
Nucleus
Kaonic hydrogen
higher
Kα
Kβ
SDD array
M. Bazzi et al., “Preliminary
study of kaonic deuterium
X-rays by the SIDDHARTA
experiment at DAFNE”,
Nucl. Phys. A907 (2013)
69-77.
EM value
K-p Kα
Upgrade the apparatus with 200 cm2 of new
SDD detectors
Seoul, IEEE NSS/MIC/RTSD 2013
Riccardo Quaglia
SIDDHARTA-1 DETECTOR ARRAYS
(produced at MPI-HLL,
Munich, Germany)
1 cm2 x 144 SDDs
Seoul, IEEE NSS/MIC/RTSD 2013
Riccardo Quaglia
4
Development of SDDs by Politecnico & FBK
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Started in 2011 within a project
supported by ESA for LaBr3
scintillator readout with SDD
arrays.
Back entrance window optimized
to achieve QE > 80 % at 380 nm
( suitable also for soft X-rays).
Considered
suitable
for
the
upgrade
of
the
Siddharta-2
apparatus,
with
preliminary
evaluation
on
prototypes
in
2012/2013
12 x 12 mm
Array: 9 SDDs
8 x 8 mm
(8 x 8 mm each)
FBK production:
• 4’’ wafer
• 6’’ wafer upgrade now operative
Average leakage current: 2 nA/cm2
Seoul, IEEE NSS/MIC/RTSD 2013
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Front-end readout strategy
CMOS Preamplifier ‘CUBE’ (recently developed at Politecnico di Milano*)
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the whole preamplifier is connected close to the SDD (and not only the FET)
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the high transconductance of the input MOS compensates the larger capacitance
introduced in the connection SDD-FET
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the remaining part of the electronics (the ASIC of analog processing) can be placed
relatively far from the detector (even 10-100cm)
*L. Bombelli, et al., “ “CUBE”, A Low-noise CMOS Preamplifier as Alternative to JFET Front-end for High-count Rate
Spectroscopy”, Nuclear Science Symposium Conference Record, 2011, N40-5.
signal 30 ns
(SDD)
55Fe
radiation entrance window
SDD
CUBE
Seoul, IEEE NSS/MIC/RTSD 2013
SDD
CUBE
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Spectroscopy with CUBE preamplifier
55Fe
SDD characteristics:
• Area = 10 mm2 (round)
• T= -40 °C (Peltier cooling)
• uncollimated source
spectrum
1.0 ms shaping time (optimum)
123.0 eV FWHM
(ENC= 3.7 e- rms)
126.4 eV FWHM
(ENC= 5.0 e- rms)
250 ns shaping time!
Seoul, IEEE NSS/MIC/RTSD 2013
Riccardo Quaglia
Single 8 x 8 mm detector (64 mm2)
Two biasing techniques of the back electrode:
• independent bonding;
• biasing with punch-through mechanism;
punchthrough
Test in a set-up with vacuum
chamber and cryostat with a
minimum temperature of 50 K.
Low temperature operations
are needed is Siddharta-2 to
speed-up the drift time
which is important for timing
of the experiment.
Fiorini, C.; Longoni, A.; Lechner, P., "Single-side
biasing of silicon drift detectors with homogeneous
light-entrance window," Nuclear Science IEEE
Transactions on, Aug 2000.
holes current density
The SDD is operated with the back
electrode disconnected and biased by
means of the punch-through technique.
This eliminates bondings on the
backside
 reduction of dead area in the
detector hybrid
Seoul, IEEE NSS/MIC/RTSD 2013
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9
Single 8 x 8 mm detector (64 mm2)
131
pre
esa 160K
standard biasing
standard
biasing
FWHM @ 6keV [eV]
130
punch-through
biasing
pre
esa 160k punchback
throught
back biasing
129
123.9 eV FWHM
128
127
126
125
124
ENC = 4.0 e-
123
0
2
4
6
8
10
12
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Shaping Time [µs]
y scale (FWHM) very small, 6 eV on all range (0.5 μs to 12 μs shaping time)!
No penalizations with temperatures below 200 K. In figure measurements at 160 K.
Similar performances below this temperature. Uncollimated source.
Seoul, IEEE NSS/MIC/RTSD 2013
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Single 12 x 12 mm detector (144 mm2)
130.4 eV FWHM
124.7 eV FWHM
0.5 μs shaping time at 60 K
4 μs shaping time at 60 K
First sampled tested recently.
Seoul, IEEE NSS/MIC/RTSD 2013
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12 mm
8 mm
Test only with standard biasing
of the back electrode.
Uncollimated source.
12 mm
Successfully tested very good
result at 150K, 100K and 50K.
8 mm
Monolithic array of 3x3 SDDs (6.7 cm2)
9 holes for
bondings
26 mm
CUBE
preamplifier
connector
26 mm
Ceramic carrier
1mm dead space on
each side: 85% active area
Bias through the punch–through
mechanism (no bonding on the back
side).
Seoul, IEEE NSS/MIC/RTSD 2013
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Test of 9 SDDs array
ASICs designed for gamma-spectroscopy with SDD
TR_OUT
TRIGGER
LOGIC
c
c
Shaping
Amplifier
(7th order)
IN_1
Baseline
Holder
TR_PRE
TR_IN
Peak
Stretcher
Peak
Stretcher
Logic
M
U
X
Channel #1
IN_2
Channel #2
Output
Buffer
OUT
IN_27
 27 channels
 Shaper filter Semi-Gaussian 7th order
complex poles.
 Peaking Time 2, 3, 4 or 6µs
 3 Gain: 10k, 20k, 30k equivalent e SPI 160 bits;
 Multiplexer 27 to 1
 MUX clock 10 MHz
 Digital transfer standard LVDS
Channel #27
nd
2 ASIC
Voltage and Current
References
Digital Section
Registers
Mux Logic
SPI
interface
Quaglia, R.; et al."Readout electronics and DAQ
system for silicon drift detector arrays in gamma
ray spectroscopy applications," IEEE
NSS/MIC/RTSD, 2012.
Peloso, R. et al. "Development of a detector based
on Silicon Drift Detectors for gamma-ray
spectroscopy for astronomy applications," IEEE
NSS/MIC/RTSD, 2012.
Seoul, IEEE NSS/MIC/RTSD 2013
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Spectra with 1” LaBr3 scintillator (57Co,
137Cs, 60Co) and arrays with 9 SDDs
SDDs array readout with the ASIC
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Preliminary tests with SDDs array made with Peltier cooling at temperature -30 °C
FWHM 139.5
FWHM
145.1
FWHM
FWHM 141.6
FWHM
146.1
FWHM 145.8
FWHM
141.5
FWHM
146.3
FWHM
146.1
154.9
Nine spectra acquired with the ASIC, average
FWHM: 145.21
Seoul, IEEE NSS/MIC/RTSD 2013
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note: leakage current still
not negligible at this
temperature: the resolution
is
consistent
at
this
temperature for a 64 mm2
large device.
Results comparable with
single channel measured
at similar temperature
Future tests with array in
vacuum chamber and lower
temperature
Conclusions and future works
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• Experimentation of single SDD (8x8mm2 and 12x12mm2) as well as first
arrays (3x3 units) show very good energy resolution performances
• SDD technology together with CUBE preamplifier looks suitable for the
Siddharta-2 upgrade
• Design of a new readout ASIC compatible with SIDDHARTA-1 DAQ.
• Definition of the basic detector for SIDDHARTA-2, size of the single
element, number of SDDs per module, ecc…
Seoul, IEEE NSS/MIC/RTSD 2013
Riccardo Quaglia
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Thank you for listening!
Questions?
Seoul, IEEE NSS/MIC/RTSD 2013
Riccardo Quaglia

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