1 - 吉富新能源科技(上海)有限公司

Report
中国创造‧上海量产
超世界水平PECVD
吉富新能源公司核心竞争力
战略客户: 通用光伏能源(烟台)
Silicon Valley R&D center
Shanghai mini line /Equipment mfg
吉富设备与其它主要竞争对手的比较
吉富
日本
欧洲
美国
1.1x1.4
1.1x1.4
1.1x1.3
2.4x2.8
光电转换效率(%)
9.5
9.5
9.5
9.5
单位峰瓦售价($/Wp)
1x
2x
2x
1.5x
single-H
dual-V
batch
cluster
腔体温度(℃)
400
220
240
240
沉积速率aSi/uSi (A/sec)
5/7
2/4
3/6
5/5
光衰退(%)
10
20
15
15
稼动率(%)
90
80
80
80
太阳能电池尺寸(m)
传输
Jifu New Product Development
Jifu PECVD Flexible Solution enables
Common Platform Equipment Design
with Multiple Product Range
• a-Si
‧ Multiple Junction
• Micro-Crystalline
• Nano-Crystalline
• Double Junction
PVD
Laser
JiFu Equipment Confidential
Proprietary Panels
硅薄膜的效率上限 32%
equation
Lab cell
Limit
Value
Jsc
Min {Jtop , Jbottom}
23/2 = 11.5
[mA/cm2]
20
[mA/cm2]
Voc
Vtop + Vbottom
0.9 + 0.5
= 1.4 Volt
1.4 + 0.6
= 2.1 V
FF
Average {FFtop, FFbottom} Aver {65%,75%}
= 70%
η
11.5 %
76%
32 %
Basics of Jsc, Voc, FF
Eff ~ Jsc x Voc x FF
Jsc = short circuit current
Voc = open circuit voltage
FF = Filled Factor
Power = Jsc x Voc
硅薄膜和多晶硅比较
• 多发电(弱光和高温)
• 成本便宜
Thin Film yields better under High Temp & Diffuse Light
Key Thin Film Benefit: Higher kWhr Yield
Comparison with Competitors
Jifu
Japan
Europe
Korea
1.1x1.4
1.1x1.4
1.1x1.3
1.1x1.4
CE (%)
9.5
9.5
9.5
9.5
Price
1x
2x
2x
1.5x
single-H
dual-V
batch
cluster
Temp (deg c)
400
220
240
240
aSi/uSi (A/sec)
5/7
2/4
3/6
5/5
LID (%)
10
20
15
20
uptime (%)
90
80
80
80
size (meter)
transfer
问题:为何要买薄膜?
答:薄膜比晶硅便宜大概30%以上, 且成本下降空间更大
晶硅电池的硅材料价格波动很大
硅薄膜和其他薄膜比较
• 锑化铬: 铬有毒
• 铜铟镓锡: 合格率需提高
硅薄膜的挑战
• 降低设备成本: 吉富
• 提高转换效率: 吉富

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