Analytical Predictive Modeling for Scalability of DG and

Report
Analytical Predictive Modeling
for the Scalability Study of DG
and GAA MOSFETs
Hamdy Abd El-Hamida, Benjamin Iñigueza, Jaume Roigb
Dept. d’Enginyeria Electrònica, Elèctrica i Automàtica,
Universitat Rovira i Virgili, 43007 Tarragona, Spain. E-mail:
[email protected]
a
bLAAS,
CNRS, 31007 Toulouse Cedex 4, France
Modeling Summary
• We have developed analytical scalable models of
the threshold voltage roll-off, DIBL and
subthreshold swing of nanoscale Gate All Around
(GAA) and Double-Gate (DG) MOSFETs
• The models are derived from an analytical solution
of the 2D or 3D Poisson’s equation, obtained using
variable separation
• Very good agreement with numerical 2D and 3D
simulations have been observed
Modeling Applications
• The models have been used
to compare the performance
of nanoscale GAA and DG
MOSFETs
• We have determined the
dimensions of the devices
necessary to obtain a certain
value of the subthreshold
swing
• It results that the GAA
device can be 33% shorter
than the DG MOSFET, and
with a 10 mV/V lower DIBL

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