### RIBLL1 RF-Deflector的物理设计

```RIBLL1 RF-Deflector的物理设计

HIRFL-RIBLL1合作组会议

Kubono Shigeru 等

2013.8.15-16
Outline
 丰质子次级束的纯度问题
 射频偏转器的原理与实例
 RIBLL1射频偏转器的物理设计
- 初步设计
- 费用估算
 下步工作

 PF型放射性束装置分离方法： B - ΔE - B
 中低能(主束能量 100 MeV/u)碎片动量分布有一低能尾巴
 丰质子一侧纯度很低

Beam

= 0， 计算出相位Φ

RIKEN-RIPS射频偏转器
RIKEN-RIPS
RIKEN-RIPS偏转器结构图
cylindrical part of the cavity is
1600 mm long and 800 mm
in diameter with water cooling
m
0m
2
1
electrode
700mm
40mm
The Y-SLIT consists of two 120
× 115 mm2 copper plates of 25
mm thickness, and its aperture
can be changed from ±0.5 mm
to ±100 mm.
RIKEN-RIPS偏转器设计参数

V0
ω
L
d
w
h

100KV
12∼18MHz
700mm
40mm
120mm
1800mm
+ Be  57MeV/u 54Ni 偏转器的效果：

58Ni

Mechanical drawing (top) and
picture (bottom) of the RF
cavity.
RIBLL1射频偏转器的物理初步设计
 A challenging case：RIBLL1 最重次级束
58Ni

53Ni
 偏转板几何尺寸的影响
 RF deflector location： T1 or T2
 射频频率的影响
68 MeV/u
58Ni
+ 9Be
 44 MeV/u
53Ni
TOF from target to T1
53Ni

Vertical position vs TOF(L=0.5m,frequency=RF,distance between
Y Slits and electrode is 1m)
Vertical position vs TOF(L=1.0m,frequency=RF,distance between
Y Slits and electrode is 1m)
9
25
vertical position at Y slits (mm)
vertical position at Y slits (mm)
8
7
6
5
4
3
2
1
0
-1
20
15
10
5
0
180
180
185
190
195
200
185
190
195
200
205
205
-5
TOF from target to T1(ns)
TOF from target to T1(ns)
Vertical position vs TOF(L=1.5m,frequency=RF,distance between
Y Slits and electrode is 1m)
Vertical position vs TOF(L=2.0m,frequency=RF,distance between
Y Slits and electrode is 1m)
40
60
vertical position at Y slits (mm)
vertical position at Y slits (mm)
35
30
25
20
15
10
5
50
40
30
20
10
0
0
180
180
185
190
195
-5
TOF from target to T1(ns)
200
205
185
190
195
-10
TOF from target to T1(ns)
200
205

Vertical position vs TOF(L=0.5m,frequency=RF,distance between
Y Slits and electrode is 1m)
Vertical position vs TOF(L=0.5m,frequency=0.5RF,distance
between Y Slits and electrode is 1m)
9
10
48V
8
7
49Cr
6
50Mn
5
4
51Fe
3
2
52Co
1
0
-1
370
53Ni
380
50Mn
8
47Ti
vertical position at Y slits (mm)
vertical position at Y slits (mm)
9
7
51Fe
6
48V
5
4
52Co
3
2
1
47Ti
0
390
400
410
TOF from target to T2 (ns)
420
430
49Cr
370
53Ni
380
390
400
410
-1
TOF from target to T2 (ns)
420
430
RIBLL1射频偏转器的结构示意图及其参数
V0 (V)
f
L(mm)
d(mm)
w(mm)
h(mm)
100k
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1000
50
120
1000

 偏转板几何尺寸的影响: 极板越长、分离效果越好
 射频频率的影响： T1:  = acc
T2:  = 0.5acc
 RF deflector location： T1 or T2

 纯化效果的决定性因素：
- 污染核y方向偏转量
- 核的y位置分布宽度
 for the challenging case：
Y分布宽度 
58Ni

53Ni

5 mm
~11
10 mm
~4
2 mm
~130
4 mm
~ 40
5 mm
2 mm
 影响纯化能力的因素
- 初级束束斑大小
- Y方向聚焦能力

 高频偏转器 Subsystems：
cavity resonator, RF power amplifier, power supply for the power
amp., a driver amplifier, vacuum system, control system, low-level
circuit system
@T1： ¥6.5M
-基频（basic frequency）偏转器： ¥5.5M
-平移RIBLL1后半部分： ¥0.5M
@T2 ： ¥9.0M
-半基频（half basic frequency）偏转器： ¥7.5M
-新聚焦透镜： ¥1.0M
 组装费：
¥0.4M
 狭缝系统：¥0.1M
 探测器：
¥0.5M

 落实经费来源，项目立项
 详细束流光学模拟：
- The influence of the RF deflector on beam profile
- modify the y-focusing to the Y-slit
Many Thanks
D1
Q3
Q4 Q5 Q6
D2
Q2
Q1
Q 06
Q 05
Q 04
C1
Q7
Q8
T0
D 0 /E 0
Q 03
Q 02
Q 01
T1
Q9
Q 10
T00
D3
Q 11
Q 12Q 13 Q 14
e a m fr o m
H IR F L
C2

R IB L L
Q 16
Q 15
T2
D4

Beam

1.T0初始位置处，粒子的位置分布（x,y）.
2.T0初始位置处，粒子的动量分布(px,py).
3.主束的时间结构：

D1
Q3
Q4 Q5 Q6
D2
Q2
Q1
Q 06
Q 05
Q 04
C1
Q7
Q8
T0
D 0 /E 0
Q 03
Q 02
01
T1
Q9
Q 10
0
D3
Q 11
Q 12Q 13 Q 14
rom
L
Q 16
Q 15
T2
D4
C2

R IB L L

1. 给定一个粒子在T0处的位置（x，y）、入射角度

2.在T0处，粒子的初始位置有一定分布（高斯或者均

Sigma=5.207mm
RF
TargetFrequency Deflector (m)
(MHz)
Electrode
length (m)
Phase length DeflectorSlit
(degree)
distance
(m)
RIKEN
12-18
55-83(ns)
21.3
0.7
35
1.8
MSU
19-27
37-52(ns)
54
1.5
140
5.3
RIBLL
10.9
92(ns)
T1(17.5)
T2(35)
1.0
1.0
A case of light low energy beam
51Mn
49Cr
47V
45Ti
43Sc
52Fe
50Mn
48Cr
46V
44Ti
53Co
51Fe
49Mn
47Cr
54Ni
52Co
50Fe
48Mn
51Co
49Fe
50C
48V
46Ti
44Sc
42Ca
47Ti
45Sc
43Ca
41K
39Ar
44Ca
42K
40Ar
38Cl
43K
41Ar
V=V0Sin(ω T + Φ)

HIRFL-RIBLL1射频偏转器的物理初步设计
D1
Q3
Q4 Q5 Q6
D2
Q2
Q1
Q 06
Q 05
Q 04
C1
Q7
Q8
T0
D 0 /E 0
Q 03
Q 02
Q 01
T1
Q9
Q 10
T00
D3
Q 11
Q 12Q 13 Q 14
B e a m fr o m
H IR F L
C2

R IB L L
Q 16
Q 15
T2
D4

Vertical position vs TOF(L=0.5m,frequency=RF,distance between
Y Slits and electrode is 1m)
Vertical position vs TOF(L=0.5m,frequency=RF,distance between
Y Slits and electrode is 1m)
9
9
vertical position at Y slits (mm)
vertical position at Y slits (mm)
7
6
5
4
3
2
1
180
185
190
195
TOF from target to T1(ns)
200
205
49Cr
7
51Fe
6
48V
5
4
52Co
3
2
1
47Ti
0
0
-1
50Mn
8
8
370
53Ni
380
390
400
410
-1
TOF from target to T2 (ns)
420
430

1.根据模拟计算，初步确定了偏转板几何参数：

2.下一步计划

```