Kirti (ppt)

Report
DU’s proposed participation in
the CMS Upgrade – Phase-II R&D
A.Bhardwaj, A.Kumar, M. Naimuddin, K.Ranjan, R.K.Shivpuri
Center for Detector & Related Software Technology (CDRST)
Delhi University (DU), Delhi, India
India-CMS Meeting,
BARC, 28 July – 29 July, 2011
Si Tracker Upgrade
Ashutosh Bhardwaj, Kirti Ranjan, R.K. Shivpuri
Our Interest
• Showed interest in Si Upgrade in Tracker in 2010
– Discussed with Frank Hartmann (then coordinating the overall
sensor R&D activities and now Deputy PM) & Duccio Abbaneo
(phase 2 overall coordination incharge) in May 2010.
– Several approved R&D projects for phase-II. Phase I R&D was
frozen.
“Development of pixel and micro-strip sensors on radiation tolerant substrates for the
tracker upgrade at SLHC”: Contact Person: M. de Palma ; submitted: April 2008 ;
status: Approved; CMS SLHC RD #08.03
“Materials, technologies and simulations for silicon sensor modules at intermediate to
large radii of a new CMS tracker for SLHC” ; Hamburg, Karlsruhe, Louvain, Vienna,
Vilnius; submitted: March 2008 ; status: Approved; CMS SLHC RD # 08.02
As a first step, we mutually decided to start up with some
effort at DU in the existing R&D and then put up a formal
presentation in the Tracker Group => Si Device Simulation
Si Device Simulation
Proposal from Frank Hartmann on Si Device Simulation (July 2010):
• The 12 strip of the multi-geometry strip cells, which comes with
different pitches & widths, in p-in-n & n-in-n version, also with
p-spray and p-stop (isolation)
• The first goal should be to understand (interstrip) capacitance values,
isolation and breakdown to support the measurements we are going to do.
Further steps could be possible improvements of the geometry.
Understanding of behavior after irradiation.
• As a second step, we should simulate some cells of the multi-geometry
long pixel structures, which come in the same configuration but in
addition with Rpoly biasing & punch-through biasing…
Alberto Messino (Upgrade Sensor WG convener) volunteered to step in to
define and watch the simulation program.
• Start with a sort of "calibration" or better a comparison of our simulation
with existing published work.
Claudio Piemonte, Device Simulations of Isolation Techniques for Silicon Microstrip Detectors
Made on p-Type Substrates,in «IEEE TRANSACTIONS ON NUCLEAR SCIENCE»,vol. 53,n. 3,2006,
pp. 1694-1705
Tracker – Phase 2 Organization
http://cms-tracker.web.cern.ch/cms-tracker/TKorganisation/Phase2_Organization-DA.pdf
Si Device Simulation– First Results
Tracker Week Meetings (11 - 15 Oct. 2010, CERN)
https://indico.cern.ch/conferenceDisplay.py?confId=80952
- Upgrade Sensor WG meeting,
- Frank Hartman (Sensor Technology Co-ordinator)
https://indico.cern.ch/getFile.py/access?contribId=0&sessionId=3&resId=1&materialId=slides&co
nfId=80952
Si Device Simulation– First Results
Simulation effort to support the HPK campaign 20‘
https://indico.cern.ch/getFile.py/access?contribId=2&sessionId=3&resId=1&materialId=slide
s&confId=80952
Device Simulation Using ATLAS- Device Simulation Program From Silvaco
Two n+ neighbouring strips, with two intermediate p+ stops.
Report to Collaboration in India-CMS
Meeting, 28 Oct. – 29 Oct. 2010
Si Device Simulation– First Results
Upgrade Plenary Meeting; Friday 15 October 2010
Progress and plans for sensors R&D 20' Speaker: F. Hartmann
Si Device Simulation– Further work
• Continuous EVO meetings and discussions with Alberto Messino
• Presented Results on MSSD Simulation in Tracker Week Meetings, 14 - 18
Feb. 2011
•
https://indico.cern.ch/conferenceDisplay.py?confId=125774
• MSSD Simulation Results 20'
https://indico.cern.ch/getFile.py/access?contribId=1&resId=0&materialId=slides&confId=125774
Si Device Simulation– Further work
Comparison Experimental/Simulation Measurement
Design # 3
200-250V
EXP Cint
0.9pF
100-150V
SIM DC Cint
0.63 pF
Similar behavior for low voltage
QF= 1e10 cm-2
• At low voltage the dip in the capacitance is similar
• At Saturation, Exp DC-Cint = 0.9 pF > Sim DC-Cint = 0.63pF
• Exp Vsaturation = 200-250V > Sim Vsaturation = 100-150V
Si Device Simulation– Further work
Upgrade Phase II Plenary, 14 Feb. - 18 Feb. 2011
Overview of HPK sensors project, Alexander Dierlamm 45'
https://indico.cern.ch/getFile.py/access?contribId=1&resId=1&materialId=slides&confId=127280
Si Device Simulation– Further work
Several groups
showed their
interests in
Process/Device
Simulation
Simulation – SLHC Sensor R&D
https://twiki.cern.ch/twiki/bin/viewauth/CMS/SLHCS
ensorDevelopment
https://twiki.cern.ch/twiki/bin/viewauth/CMS/SLHCS
ensorDevelopment#Simulations
https://twiki.cern.ch/twiki/pub/CMS/SLHCSensorDev
elopment/Simulation_tasks_V1.pdf
Simulation – SLHC Sensor R&D
Simulations: Alberto Messineo (Universita di Pisa-Sezione di Pisa (INFN)), Tracker Week
Meetings, 18 – 22 July, 2011
https://indico.cern.ch/getFile.py/access?contribId=8&resId=0&materialId=slides&confId=144303
•
•
•
•
•
Present Facilities at DU
Class 10000 lab with class 100/1000 laminar
flow tables (minor maintenance required)
Keithley 237, Keithley 2410, Keithley 590 CV
system
Cascade Semi-automatic Probe Station
Keithley 2400 Semiconductor
Characterization System
Few test structures from Frank for
characterization
Ashutosh Bhardwaj, D. U.
Tracker DPG Tasks (service work)
•
Tracker Alignment using cosmics - present Results on Tracker Alignment in
– Tracker Detector Performance Group Weekly meetings (Thursday 23 June 2011)
https://indico.cern.ch/conferenceDisplay.py?confId=127125
– Weekly Tracker DPG meeting (08 July 2011)
https://indico.cern.ch/conferenceDisplay.py?confId=127126
Reported by Alignment
conveners (Gero Flucke &
Alessio Bonato) in Tracker
General Meeting @ CMS Week,
June 28th, 2011
https://indico.cern.ch/getFile.py/access
?contribId=5&sessionId=0&resId=0&ma
terialId=slides&confId=142604
Proposal– SLHC Sensor R&D
•
We have shown interest in participation in all activities related with
Si Sensor R&D in phase II of the CMS –
• Simulation – already shown encouraging results – will continue.
• Characterization – few test structures to be characterized.
• Fabrication of sensors/test structures – will explore the possibility
•
Interested in giving a presentation in Tracker Institutional Board
meeting for formal induction
•
6k CHF /PhD/annum will be needed under M&O-B for Tracker from
the year 2013. (for year 2012 – it’s 3k CHF per PhD)
•
Also interested in joining RD50 (Radiation Hard Si Sensors R&D)
– 3K CHF/institute/annum – lot of European facilities/expertise
MPGD Upgrade
A.Kumar, Md. Naimuddin, R.K. Shivpuri
GEMs for CMS high eta upgrade(MPGD)
The Physics case of challenging post-TDR scenario where:
-300 fb-1 already collected
-centre-of-mass energy: 14TeV, lumi 2-3 x 1034cm-2s-1
-events are with nominal or 2 x nominal pile-up
Physics Goals:
Boosted objects with muon-decay channels, asymmetry, coupling & spin
measurements, fusion processes.
High luminosity physics:=> making a case for a coherent detector system in the
true “forward” eta region
- Triple boson production, Z’ factory physics, Exotic with light object decaying to
muons
The GEM technology is likely to be a strong candidate for “forward” tracking:
-spatial resolution ~ 100 microns, time resolution < 5ns, detector efficiency > 98%
-precise tracking and fast trigger information simultaneously
-can be designed with sufficiently fine segmentation to cope with high particle fluxes
~ (1MHz/mm2) at LHC
GEMs for CMS high eta upgrade(MPGD)
GEMs for CMS high eta upgrade(MPGD)
==>Possible participation
1.MPGD R&D and fabrication (GEM foils, mechanics, readout circuits etc)
2.Module testing and characterization (using cosmic muons, X-ray test up)
3.DAQ (Fast Electronics, Power supplies, Cables, Gas mixing unit etc)
4.Beam test participation and online analysis at CERN
5.Beam test Data Analysis
6.Detector Simulation
7.Physics Potential (MC studies)
==> Possibility of putting PhD students.
Back UP
Software: Silvaco Tools
• Process Simulation
– ATHENA Framework
– S-SUPREM4 (Process Simulator)
– MC
Implant
(Monte-Carlo
Implantation Simulator)
– ELITE
(Physical
Etching
and
Deposition Simulator)
– OPTILITH (2D Optical Lithography
Simulator)
– MC Deposit/ETCH (2D Monte Carlo
Deposition & Etch Simulator)
• Device Simulation
–
–
–
–
–
–
–
–
ATLAS (2D Silicon Device Simulator)
S-PISCES
(2D
Silicon
Device
Simulator)
LUMINOUS
(2D
Optoelectronic
Device Simulator)
BLAZE (2D Device Simulator for
Advanced Materials)
Device 3D (3D Device Simulator)
TFT (Amorphous & Polycrystalline
Device Simulator)
QUANTUM (3D Simulation Models
for Quantum Mechanical Effects)
FERRO
(Ferroelectric
Field
Dependent Permittivity Model)
23

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